Search results for "current-voltage characteristics"

showing 4 items of 4 documents

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
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Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence

2017

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed

Nuclear and High Energy PhysicsMaterials scienceAnnealing (metallurgy)Schottky barrierschottky diodes01 natural sciencesFluenceIonpower semiconductor deviceschemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringLeakage (electronics)Diode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingNuclear Energy and EngineeringchemistryOptoelectronicsbusinession radiation effectsIEEE Transactions on Nuclear Science
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Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

2016

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

silicon carbide (SiC)Materials scienceAnnealing (metallurgy)Schottky barrierSchottky diodesMetal–semiconductor junction01 natural sciencesTemperature measurementpower semiconductor deviceschemistry.chemical_compoundstomatognathic system0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringSafety Risk Reliability and QualityDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingElectronic Optical and Magnetic MaterialschemistryOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Device and Materials Reliability
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Computer Simulation of the Electric Transport Properties of the FeSe Monolayer

2020

The research has been supported by the grant of the Ministry of Education and Science of the Republic of Kazakhstan AP08052562. In addition, the research of AIP has been supported by the Latvian- Ukrainian Grant LV-UA/2018/2.

2d-nanoelectronicsMaterials scienceCondensed matter physicsPhysicsQC1-999General Engineering2D-nanoelectronicsGeneral Physics and Astronomy:NATURAL SCIENCES::Physics [Research Subject Categories]02 engineering and technologyElectric transport021001 nanoscience & nanotechnology01 natural sciencesFeSe monolayerCurrent-voltage characteristicstransmission spectra0103 physical sciencesMonolayercurrent-voltage characteristicsfese monolayer010306 general physics0210 nano-technology
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